C a p a c i t a n c e b e t w e e n t e r m i n a l s ( P F ) Reverse voltage (V) Fig.3 - Capacitance between t erminals characteristics RATING AND CHARACTERISTIC CURVES (CDBQR42/43-HF) SMD Schottky Barrier Diode Page 2 QW-G1101 F o r w a r d c u r r e n t ( m A ) 0.2 0.4 0 10 100 0.6 1 0.1 0.8 Forward voltage (V) Fig. 1 - Forward characteristics O - 2 5 C O 2 5 C O 7 5 C O 1 2 5 C R e v e r s e c u r r e n t ( A ) Reverse voltage (V) 10u 10n 100u 1m 1u 100n 0 10 20 30 40 Fig. 2 - Reverse characteristics 25 O C 75 O C 25 O C 1 0 5 10 15 20 25 30 35 0 2 4 6 8 16 f=1MHz 25 O C TA= 12 10 14 0 20 40 60 80 100 0 25 50 75 100 125 150 e ( O C) Ambient temperatur A v e r a g e f o r w a r d c u r r e n t ( % ) Mounting on glass epoxy PCBs Fig.4 - Current derating curve 120 500 REV:B Comchip Technology CO., LTD. |
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